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| KSP8598/8599 KSP8598/8599 Amplifier Transistor * Collector-Emitter Voltage: VCEO= KSP8598: 60V KSP8599: 80V * Collector Power Dissipation: PC (max)=625mW * Suffix "-C" means Center Collector (1. Emitter 2. Collector 3. Base) 1 TO-92 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : KSP8598 : KSP8599 VCEO Collector-Emitter Voltage : KSP8598 : KSP8599 VEBO IC PC TJ TSTG Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature 1. Emitter 2. Base 3. Collector Value -60 -80 -60 -80 -5 -500 625 150 -55 ~ 150 Units V V V V V mA mW C C Electrical Characteristics Ta=25C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage : KSP8598 : KSP8599 * Collector-Emitter Breakdown Voltage : KSP8598 : KSP8599 Emitter-Base Breakdown Voltage Collector Cut-off Current : KSP8598 : KSP8599 Collector Cut-off Current Emitter Cut-off Current * DC Current Gain Test Condition IC= -100A, IE=0 Min. -60 -80 IC= -10mA, IB=0 -60 -80 IE= -10A, IC=0 VCB= -60V, IE=0 VCB= -80V, IE=0 VCE= -60V, IB=0 VEB= -4V, IC=0 VCE= -5V, IC= -1mA VCE= -5V, IC= -10mA VCE= -5V, IC= -100mA IC= -100mA, IB= -5mA IC= -100mA, IB= -10mA VCE= -5V, IC= -1mA VCE= -5V, IC= -10mA VCE= -5V, IC= -10mA f=100MHz VCB= -5V, IE=0 f=1MHz -0.5 -0.6 150 8 100 100 75 -5 -100 -100 -100 -100 300 V V V nA nA nA nA Max. Units V V BVCEO BVEBO ICBO ICEO IEBO hFE VCE (sat) VBE (on) * Collector-Emitter Saturation Voltage * Base-Emitter On Voltage : KSP8598 : KSP8599 Current Gain Bandwidth Product Output Capacitance -0.4 -0.3 -0.7 -0.8 V V V V MHz pF fT Cob * Pulse Test: Pulse Width300s, Duty Cycle2% (c)2001 Fairchild Semiconductor Corporation Rev. A1, July 2001 KSP8598/8599 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 -10 IC = 10 IB VCE = -5V hFE, DC CURRENT GAIN -1 V BE(sat) 100 -0.1 VCE(sat) 10 -1 -10 -100 -1000 -0.01 -1 -10 -100 -1000 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 100 1000 IE = 0 f = 1MHz fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT VCE = -5V Cob [pF], CAPACITANCE 10 100 1 -0.1 10 -1 -10 -100 -1 -10 -100 VCB [V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT Figure 3. Output Capacitance Figure 4. Current Gain Bandwidth Product (c)2001 Fairchild Semiconductor Corporation Rev. A1, July 2001 KSP8598/8599 Package Demensions TO-92 4.58 -0.15 +0.25 0.46 14.47 0.40 0.10 4.58 0.20 1.27TYP [1.27 0.20] 3.60 0.20 1.27TYP [1.27 0.20] 0.38 -0.05 +0.10 3.86MAX 1.02 0.10 0.38 -0.05 +0.10 (R2.29) (0.25) Dimensions in Millimeters (c)2001 Fairchild Semiconductor Corporation Rev. A1, July 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWERTM FAST(R) OPTOPLANARTM ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TruTranslationTM TinyLogicTM UHCTM UltraFET(R) VCXTM STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2001 Fairchild Semiconductor Corporation Rev. H3 |
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